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1

Nitrogen effect on grown-in defects in Czochralski silicon crystals

Shigeru Umeno, Toshiaki Ono, Tadami Tanaka, Eiichi Asayama, Hideshi Nishikawa, Masataka Hourai, Hisashi Katahama, Masakazu Sano

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 106 KB

english, 2002

2

Formation of strain-free GaAs-on-Si structures by annealing under ultrahigh pressure

Hiroshi Ishiwara, Tomohisa Hoshino, Hisashi Katahama

Journal:

Materials Chemistry and Physics

Year:

1995

Language:

english

File:

PDF, 532 KB

english, 1995

3

Raman scattering intensity of the long-period polytypes of

Nakashima, S., Katahama, H., Nakakura, Y., Mitsuishi, A., Pal/osz, B.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 567 KB

english, 1985

4

Relative Raman intensities of the folded modes in SiC polytypes

Nakashima, S., Katahama, H., Nakakura, Y., Mitsuishi, A.

Journal:

Physical Review B

Year:

1986

Language:

english

File:

PDF, 740 KB

english, 1986

5

Crystalline quality of strain-free GaAs-on-Si structures formed by annealing under ultrahigh pressure

Ishiwara, Hiroshi, Hoshino, Tomohisa, Katahama, Hisashi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 238 KB

english, 1995

6

Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer

Shiba, Yasunari, Asai, Koyu, Kamei, Kazuhito, Katahama, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1995

File:

PDF, 1.35 MB

1995

7

Si doping and MBE growth of GaAs on tilted (111)A substrates

M. Shigeta, Y. Okano, H. Seto, H. Katahama, S. Nishine, K. Kobayashi, I. Fujimoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 310 KB

english, 1991

8

Separation of non-radiative and below-gap emission lifetimes in a heavily Si-doped GaAs/AlGaAs quantum well

Norihiko Kamata, Koji Yamada, Hiroshi Tsuchiya, Hisashi Katahama, Yukio Shakuda, Takeo Suzuki

Journal:

Journal of Luminescence

Year:

1991

Language:

english

File:

PDF, 310 KB

english, 1991

9

Raman scattering study of interlayer bonding in CdI2 AND SnS2 under hydrostatic pressure: analysis by use of Van Der Waals interaction

H. Katahama, S. Nakashima, A. Mitsuishi, M. Ishigame, H. Arashi

Journal:

Journal of Physics and Chemistry of Solids

Year:

1983

Language:

english

File:

PDF, 677 KB

english, 1983

10

Estimation of interlayer interactions in CdI2 by light scattering techniques

S. Nakashima, H. Katahama, M. Daimon, A. Mitsuishi

Journal:

Solid State Communications

Year:

1979

Language:

english

File:

PDF, 328 KB

english, 1979

11

Estimation of dispersion curve of transverse acoustic phonons in CdI2 by Raman scattering

H. Katahama, S. Nakashima, M. Hangyo, A. Mitsuishi, B. Pałosz

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 318 KB

english, 1984

12

The effect of polytypism on the vibrational properties of SnS2

S. Nakashima, H. Katahama, A. Mitsuishi

Journal:

Year:

1981

Language:

english

File:

PDF, 244 KB

english, 1981

13

Band and deep emission and their recombination processes in a heavily Si doped GaAs/AlGaAs quantum well

H. Katahama, H. Tsuchiya, Y. Shakuda, N. Kamata, K. Kobayashi, T. Suzuki

Journal:

Superlattices and Microstructures

Year:

1989

Language:

english

File:

PDF, 392 KB

english, 1989

14

Two-step decoupling of excitonic states in a biperiodic GaAs/AlAs short period superlattice under electric fields

K. Kawashima, K. Fujiwara, K. Katahama

Journal:

Superlattices and Microstructures

Year:

1990

Language:

english

File:

PDF, 476 KB

english, 1990

15

Dynamics of inter- and intra-growth island exciton transfer in GaAs single quantum wells under direct picosecond optical excitation

Kenzo Fujiwara, Hisashi Katahama, Kyozo Kanamoto, Roberto Cingolani, Klaus Ploog

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

16

Hydrogen plasma irradiation and postannealing effects on crystalline quality at vicinal Si (100) surface

Koyu Asai, Kyoichi Komachi, Kazuhito Kamei, Hisashi Katahama

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 464 KB

english, 2000

17

Raman scattering study on the first step growth of GaAs on Si grown by MOCVD

H. Katahama, Y. Matsuda, Y. Shiba, K. Fujita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 415 KB

english, 1991

18

Mechanical properties of 300 mm wafers

M Akatsuka, K Sueoka, N Adachi, N Morimoto, H Katahama

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 316 KB

english, 2001

19

Intersubband absorption changes in GaAs/AlGaAs MQW induced by external light

H. Tsuchiya, Y. Shakuda, H. Katahama

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 299 KB

english, 1990

20

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Sueoka, Koji, Akatsuka, Masanori, Yonemura, Mitsuharu, Ono, Toshiaki, Asayama, Eiichi, Katahama, Hisashi

Journal:

Journal of The Electrochemical Society

Year:

2000

Language:

english

File:

PDF, 657 KB

english, 2000

21

[IEEE 1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings - San Francisco, CA, USA (6-8 Oct. 1997)] 1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) - Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers

Akatsuka, M., Sueoka, K., Katahama, H., Sadamitsu, S., Koike, Y.

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

22

Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells

Fujiwara, K., Katahama, H., Kanamoto, K., Cingolani, R., Ploog, K.

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 206 KB

english, 1991

23

Lattice relaxation of GaAs islands grown on Si(100) substrate

Asai, Koyu, Kamei, Kazuhito, Katahama, Hisashi

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 374 KB

english, 1997

24

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

Okano, Yoshimichi, Seto, Hiroyuki, Katahama, Hisashi, Nishine, Shiro, Fujimoto, Isao, Suzuki, Takeo

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 598 KB

1989

25

Intersubband Absorption in In 0.15 Ga 0.85 As/Al 0.35 Ga 0.65 As Multiple Quantum Wells

Shakuda, Yukio, Katahama, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 557 KB

1990

26

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

Okano, Yoshimichi, Shigeta, Mitsuhiro, Seto, Hiroyuki, Katahama, Hisashi, Nishine, Shiro, Fujimoto, Isao

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 599 KB

1990

27

Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy

Asai, Koyu, Katahama, Hisashi, Shiba, Yasunari

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 1.10 MB

1993

28

Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing

Asai, Koyu, Katahama, Hisashi, Shiba, Yasunari

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 2.41 MB

1994

29

Tem Studies on the Interdiffusion of InxGa1-xAs/GaAs/Si Heterostructure

Kamei, Kazuhito, Fujita, Koji, Shiba, Y., Maehara, Yasuhiro, Katahama, H.

Journal:

Defect and Diffusion Forum

Year:

1993

File:

PDF, 484 KB

1993

30

Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers

Sueoka, K., Akatsuka, M., Yonemura, Mitsuharu, Sadamitsu, S., Asayama, Eiichi, Ono, T., Koike, Y., Katahama, H.

Journal:

Solid State Phenomena

Year:

1999

Language:

english

File:

PDF, 693 KB

english, 1999

31

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

Kawasaki, N., Yoshimura, T., Tonouchi, Masayoshi, Tani, M., Sakai, Kazufumi, Katahama, H.

Journal:

Solid State Phenomena

Year:

2003

File:

PDF, 356 KB

2003

32

Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers

Sueoka, K., Akatsuka, M., Katahama, H., Adachi, N.

Journal:

Solid State Phenomena

Year:

1997

File:

PDF, 586 KB

1997

33

Internal Gettering for Ni Contamination in Czochralski Silicon Wafers

Sueoka, Koji, Sadamitsu, Shinsuke, Koike, Yasuo, Kihara, Takayuki, Katahama, Hisashi

Journal:

Journal of The Electrochemical Society

Year:

2000

Language:

english

File:

PDF, 268 KB

english, 2000

34

Computer Simulation for Morphology, Size, and Density of Oxide Precipitates in CZ Silicon

Sueoka, Koji, Akatsuka, Masanori, Okui, Masahiko, Katahama, Hisashi

Journal:

Journal of The Electrochemical Society

Year:

2003

Language:

english

File:

PDF, 155 KB

english, 2003

35

Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers

K. Sueoka, M. Akatsuka, H. Katahama, N. Adachi

Year:

1997

Language:

english

File:

PDF, 186 KB

english, 1997

36

Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers

Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Koie, Yasuo, Sadamitsu, Shinsuke

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 1009 KB

1998

37

Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment

Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Morimoto, Nobuyuki, Adachi, Naoshi

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 318 KB

english, 1998

38

Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method

Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Morimoto, Nobuyuki, Adachi, Naoshi

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 175 KB

english, 1997

39

Raman Scattering in CdI 2 Polytypes and Dispersion of Optical Phonons

Katahama, Hisashi, Nakashima, Shin-ichi, Mitsuishi, Akiyoshi, Pałosz, Bogdan

Journal:

Journal of the Physical Society of Japan

Year:

1985

File:

PDF, 1.17 MB

1985